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Silicon Nanowire Transistors by Ahmet Bindal, Sotoudeh Hamedi-Hagh

• Silicon Nanowire Transistors
• Ahmet Bindal, Sotoudeh Hamedi-Hagh
• Page: 144
• Format: pdf, ePub, mobi, fb2
• ISBN: 9783319271750
• Publisher: Springer International Publishing

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Nanowire Transistors Could Keep Moore's Law Alive - IEEE Spectrum Hence, nanowire FETs' other name: “gate-all-around” transistors. It consists of an array of 225 doped-silicon nanowires, each 30 nm wide  Dual-gate silicon nanowire transistors with nickel silicide contacts The formation of nickel silicide contacts in silicon nanowire transistors and its impact on the electrical device characteristics is investigated. The authors notice   Gate-All-Around Silicon Nanowire Transistors with channel-last For the first time, a Gate-All-Around (GAA) Silicon Nanowire Transistor (SNWT) with one special nanowire channel-last (NCL) process technology on silicon (Si)   Theoretical investigation of surface roughness scattering in silicon than in planar metal-oxide-semiconductor field-effect-transistors with many of surface roughness scattering in silicon nanowire transistors. Random Telegraph Noise in N-type and P-type Silicon Nanowire type silicon nanowire transistors (SNWT) for the first time and derived accurate Introduction. Recently, gate-all-around nanowire MOSFET emerges as one.

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